How to report and benchmark emerging field-effect transistors
How to report and benchmark emerging field-effect transistors
复制标题
DOI：
10.1038/s41928-022-00798-8
复制
发表时间：
2022-07-01
影响因子：
34.3
通讯作者：
Richter, Curt A.
中科院分区：
文献类型：
--
作者：
Cheng, Zhihui;Pang, Chin-Sheng;Richter, Curt A.
在场效应晶体管中使用有机、氧化物和低维材料已经研究了几十年。然而，由于多个设备参数的相互依赖性，正确报告和比较设备性能仍然具有挑战性。这一研究界的跨学科性也导致缺乏一致的报告和基准准则。在这里，我们提出了报告和基准测试关键场效应晶体管参数和性能指标的指导方针。我们提供了一个使用二维半导体场效应晶体管的报告和基准测试过程的例子。我们的指南应有助于促进新兴场效应晶体管器件性能评估的改进方法，帮助该领域以更一致和更有意义的方式取得进展。该观点探讨了基于新兴材料的场效应晶体管的操作和性能评估所涉及的挑战，并为器件的一致性报告和基准测试提供了指导。
The use of organic, oxide and low-dimensional materials in field-effect transistors has now been studied for decades. However, properly reporting and comparing device performance remains challenging due to the interdependency of multiple device parameters. The interdisciplinarity of this research community has also led to a lack of consistent reporting and benchmarking guidelines. Here we propose guidelines for reporting and benchmarking key field-effect transistor parameters and performance metrics. We provide an example of this reporting and benchmarking process using a two-dimensional semiconductor field-effect transistor. Our guidelines should help promote an improved approach for assessing device performance in emerging field-effect transistors, helping the field to progress in a more consistent and meaningful way.This Perspective examines the challenges involved in assessing the operation and performance of field-effect transistors based on emerging materials, and provides guidelines for the consistent reporting and benchmarking of the devices.