Direct stamp fabrication for NIL and hot embossing using HSQ
Direct stamp fabrication for NIL and hot embossing using HSQ
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DOI：
10.1016/j.mee.2007.01.122
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发表时间：
2007-12-01
影响因子：
2.3
通讯作者：
McCloy, D.
中科院分区：
文献类型：
--
作者：
Gadegaard, N.;McCloy, D.
通常，用于纳米压印的印章或母版是通过电子束光刻(EBL)和随后的反应离子蚀刻硅来制造的。在这里，我们提出了一种一步法来制备适用于纳米压印和热压印的邮票。邮票直接在HSQ(氢硅氧烷)中制造，HSQ是一种负性EBL抗蚀剂，具有高横向分辨率和良好的机械性能。我们通过热压花法成功地转移了PMMA和PCL中的图案，其特征尺寸可达20 nm。这种图案转移对于生物应用是有用的。此外，我们还证明，这种方法可以使邮票适合于纳米压印光刻，并已实现了小至35纳米的特征。研究发现，通过退火可以提高HSQ的稳定性和强度，虽然不粘涂层有助于脱模，但并不是必须的。(C)2007 Elsevier B.V.保留所有权利。
Commonly stamps or masters for nanoimprinting are made by electron beam lithography (EBL) and subsequent reactive ion etching into silicon. Here we present a single step procedure to prepare stamps suitable for nanoimprinting and hot embossing. The stamps are directly fabricated in HSQ (hydrogen silsequioxane), a negative EBL resist, which has a high lateral resolution and good mechanical properties. We demonstrate successful pattern transfer in both bulk PMMA and PCL by hot embossing with features down to 20 nm. Such pattern transfer is useful for biological applications. Also, we demonstrate that this approach can make stamps suitable for nanoimprint lithography and have achieved features as small as 35 nm. It was found that the stability and strength of the HSQ could be improved by annealing and that the application of a non-stick coating was not necessarily required although it aided the demoulding. (C) 2007 Elsevier B.V. All rights reserved.