AlGaSb avalanche photodiode exhibiting a very low excess noise factor
AlGaSb avalanche photodiode exhibiting a very low excess noise factor
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AlGaSb 雪崩光电二极管表现出极低的过量噪声系数
DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
O. Wada
中科院分区：
文献类型：
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作者：
S. Miura;T. Mikawa;H. Kuwatsuka;N. Yasuoka;T. Tanahashi;O. Wada
研制了Al_（0.053）Ga_（0.947）Sb雪崩光电二极管（APD）。首先，已经证明了过量噪声因子以及电离率比的测量。获得了3.8的低过量噪声因子，比常规GaInAs APD低1.2dB。从这个过量噪声因子，空穴-电子电离速率比（keff）的有效值已被确定为高达5，与倍增数据给出的空穴-电子电离速率比（β/α）非常一致。该keff值是长波长III-V APD有史以来报告的最高值。
An Al0.053Ga0.947Sb avalanche photodiode (APD) has been fabricated and tested. First, measurement of an excess noise factor as well as an ionization rate ratio has been demonstrated. A low excess noise factor of 3.8, which is 1.2 dB lower than the conventional GaInAs APD, has been obtained. From this excess noise factor, the effective value of the hole‐to‐electron ionization rate ratio (keff) has been determined as high as 5, being in good agreement with the hole‐to‐electron ionization rate ratio (β/α) given by the multiplication data. This keff value is the highest ever reported for long‐wavelength III‐V APDs.