Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges
Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges
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DOI：
10.1126/science.1246137
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发表时间：
2014-01-10
期刊：
影响因子：
56.9
通讯作者：
Gu, Gong
中科院分区：
文献类型：
--
作者：
Liu, Lei;Park, Jewook;Gu, Gong
通过将外延的概念应用于二维空间，我们展示了一个原型材料系统石墨烯和六方氮化硼（h-BN）的单原子层面内异质结构的生长。单层结晶h-BN从具有原子晶格相干性的单层石墨烯的新鲜边缘生长，形成突然的一维界面或边界。更重要的是，h-BN晶格取向仅由石墨烯决定，放弃了支持铜衬底的有利配置。
By adapting the concept of epitaxy to two-dimensional space, we show the growth of a single-atomic-layer, in-plane heterostructure of a prototypical material system-graphene and hexagonal boron nitride (h-BN). Monolayer crystalline h-BN grew from fresh edges of monolayer graphene with atomic lattice coherence, forming an abrupt one-dimensional interface, or boundary. More important, the h-BN lattice orientation is solely determined by the graphene, forgoing configurations favored by the supporting copper substrate.