Coherent plasmons in n-doped GaAs
Coherent plasmons in n-doped GaAs
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n 掺杂 GaAs 中的相干等离子体激元
DOI：
10.1103/physrevb.58.4553
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发表时间：
1998
影响因子：
3.7
通讯作者：
K. Unterrainer
中科院分区：
文献类型：
--
作者：
R. Kersting;J. Heyman;G. Strasser;K. Unterrainer
飞秒激光激发体$n$-掺杂GaAs导致相干等离子体激元激发，发出强烈的亚毫米波辐射。我们在时间分辨实验中研究了发射太赫兹辐射的等离子体动力学。结果表明，太赫兹脉冲是由体材料中的非本征电子等离子体相干振荡产生的。等离子体激元激发是通过光激发后表面耗尽场的单侧屏蔽开始的。温度相关的测量表明，等离子体激元阻尼是由于声子散射。
Femtosecond laser excitation of bulk $n$-doped GaAs leads to coherent plasmon excitations that emit intense submillimeter wave radiation. We investigated the underlying plasmon dynamics in time-resolved experiments on the emitted THz radiation. The results show that THz pulses are emitted due to the coherent oscillation of the extrinsic electron plasma in the bulk. The plasmon excitations are started by single-sided screening of the surface depletion field after photoexcitation. Temperature-dependent measurements indicate that the plasmon damping is due to phonon scattering.