On the construction of an Fe3O4 based all-oxide spin-valve
On the construction of an Fe3O4 based all-oxide spin-valve
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DOI：
10.1016/s0304-8853(99)00751-9
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发表时间：
2000-03
影响因子：
2.7
通讯作者：
van der Pj Zaag;Pjh Pascal Bloemen;J. Gaines;R. Wolf;van der Paa Paul Heijden;van de Rjm René Veerdonk;De Jonge
中科院分区：
文献类型：
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作者：
van der Pj Zaag;Pjh Pascal Bloemen;J. Gaines;R. Wolf;van der Paa Paul Heijden;van de Rjm René Veerdonk;De Jonge
讨论了基于 Fe3O4 中固有的、完全自旋极化电子传输构建全氧化物自旋阀的进展。已经研究了两种可能的氧化间隔层：MgO 和 Mn3O4。层间耦合研究表明，MgO 是两者中更合适的间隔层。到目前为止，我们制造的全氧化物、Fe3O4 基旋转阀的磁阻效应有限，≤0.4%。讨论了这种低磁阻效应的可能原因。
The progress made in constructing an all-oxide spin valve based on the intrinsic, fully spin-polarized electron transport in Fe3O4is discussed. Two possible oxidic spacer layers, MgO and Mn3O4, have been investigated. Interlayer coupling studies indicate that MgO is the more suitable spacer layer of the two. Thus far a limited magnetoresistive effect ⩽0.4% is found in the all oxide, Fe3O4-based, spin-valves which we have made. Possible causes for this low magnetoresistive effect are discussed.