High-energy ions and atoms sputtered and reflected from a magnetron source for deposition of magnetic thin films
High-energy ions and atoms sputtered and reflected from a magnetron source for deposition of magnetic thin films
复制标题
高能离子和原子从磁控管源溅射和反射,用于沉积磁性薄膜
DOI:
10.1116/1.1943452
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发表时间:
2005
期刊:
影响因子:
--
通讯作者:
H. Sugai
中科院分区:
文献类型:
--
作者:
H. Matsui;H. Toyoda;H. Sugai
In the magnetron sputtering process, moderate bombardment of particles on a substrate gives favorable effects on the deposited films, while excessive bombardment at high energies may cause film damage and surface roughness. To make these influences clear, high-energy ions and neutrals are comprehensively measured by a mass spectrometer with an energy analyzer in the case of magnetron sputtering of a Permalloy™ target (80%Ni∕20%Fe). Ni atoms sputtered from the target by a dc magnetron discharge (∼600V, <0.2A) in argon below 4 Pa have an energy distribution function (EDF) spreading up to ∼8eV. A similar shape of EDF is also observed for Ni+ ions, which are produced possibly by electron-impact ionization of Ni atoms in gas phase. The EDF of Ar+ ions has a tail of extremely high energies of ∼150eV. Production of such energetic ions is tentatively explained in terms of resonant charge exchange of energetic Ar atoms reflected from the target after surface neutralization of ∼600eVAr+ ions impinging on the target...