Light amplification in polymer field effect transistor structures
Light amplification in polymer field effect transistor structures
复制标题
聚合物场效应晶体管结构中的光放大
DOI：
10.1063/1.1597957
复制
发表时间：
2003
影响因子：
3.2
通讯作者：
M. Andersson
中科院分区：
文献类型：
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作者：
Marc Pauchard;J. Swensen;D. Moses;A. Heeger;E. Perzon;M. Andersson
研究了聚（2-（2′，5 ′-双辛氧基）苯）-1，4-亚苯基亚乙烯（BOP-PPV）薄膜在光泵下的放大自发辐射（ASE），该薄膜包括栅电极、栅绝缘材料（SiO2）薄膜和作为发光半导体层的聚合物薄膜（即无源、漏电极的场效应晶体管）.测量了不同栅绝缘层厚度下不同栅电极对放大发射阈值和波长的影响。观察到ASE阈值（It）随着电极和聚合物层之间的分离的减小而呈指数增加。在具有200 nm SiO2栅极绝缘体的结构中，对于n-Si栅极电极，It=300 kW/cm 2，对于Au电极（100 nm厚），It = 200 kW/cm 2。与纯SiO2（It=2 kW/cm 2）上的相同聚合物膜相比，这种增加是由于附近栅电极中的波导损耗。在玻璃上使用氧化铟锡（ITO）栅电极（140 nm厚），再次使用200...
The amplified spontaneous emission (ASE) of optically pumped films of poly(2-(2′,5′-bis(octyloxy)benzene)-1,4-phenylenevinylene (BOP-PPV) was studied in structures comprising a gate electrode, a thin film of gate insulator material (SiO2) and the polymer film as luminescent semiconducting layer (i.e. a field effect transistor without the source and drain electrodes). The influences of different gate electrodes on the threshold and the wavelength of the amplified emission were measured for variable thickness of the gate insulator. An exponential increase in ASE threshold (It) with decreasing separation between electrode and polymer layer was observed. In structures with 200 nm SiO2 gate insulator, It=300 kW/cm2 with an n-Si gate electrode and 200 kW/cm2 with Au electrode (100 nm thick). Compared to the same polymer film on pure SiO2 (It=2 kW/cm2), this increase results from waveguide losses in the nearby gate electrode. With an indium–tin–oxide (ITO) gate electrode (140 nm thick) on glass, again with a 200...
DOI：
10.1007/978-1-4899-1039-4
发表时间：
1988
期刊：
--
影响因子：
--
作者：
T. Tamir;R. Alferness
通讯作者：
T. Tamir;R. Alferness