Phonon confinement and self-limiting oxidation effect of silicon nanowires synthesized by laser ablation
Phonon confinement and self-limiting oxidation effect of silicon nanowires synthesized by laser ablation
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DOI：
10.1063/1.2218386
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发表时间：
2006-07-15
影响因子：
3.2
通讯作者：
Ito, S.
中科院分区：
文献类型：
--
作者：
Fukata, N.;Oshima, T.;Ito, S.
研究了激光烧蚀法制备的硅纳米线的声子限制和自限氧化效应。在激光烧蚀和随后的热氧化过程中的合成参数控制的硅纳米线的尺寸。热氧化增加了硅纳米线表面氧化层的厚度，导致其结晶硅芯直径减小。这种效应导致的硅光学声子峰的下移和不对称的扩大，由于声子限制，而过度氧化导致的上移，由于压缩应力。压应力通过自限氧化效应抑制了硅纳米线的氧化。该结果表明，Si芯直径可以通过压应力来控制。(c)2006年，美国物理学会。
The phonon confinement and self-limiting oxidation effects of silicon nanowires (SiNWs) synthesized by laser ablation were investigated. The size of SiNWs was controlled by the synthesis parameters during laser ablation and the subsequent thermal oxidation. Thermal oxidation increases the thickness of the SiNWs' surface oxide layer, resulting in a decrease in their crystalline Si core diameter. This effect causes a downshift and asymmetric broadening of the Si optical phonon peak due to phonon confinement, while excess oxidation causes an upshift due to compressive stress. The compressive stress retarded the oxidation of the SiNWs by self-limiting oxidation effect. This result shows that the Si core diameter can be controlled by compressive stress. (c) 2006 American Institute of Physics.