Properties of Schottky Barrier Diodes on (In(x)Ga(1-x))₂O₃ for 0.01 ≤ x ≤ 0.85 Determined by a Combinatorial Approach.
Properties of Schottky Barrier Diodes on (In(x)Ga(1-x))₂O₃ for 0.01 ≤ x ≤ 0.85 Determined by a Combinatorial Approach.
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DOI：
10.1021/acscombsci.5b00084
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发表时间：
2015-11
影响因子：
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通讯作者：
H. Wenckstern;D. Splith;A. Werner;S. Müller;M. Lorenz;M. Grundmann
中科院分区：
文献类型：
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作者：
H. Wenckstern;D. Splith;A. Werner;S. Müller;M. Lorenz;M. Grundmann
我们研究了通过大面积偏移脉冲激光沉积方法实现的具有横向变化阳离子组成的(In(x)Ga(1-x))2O3薄膜的性能。在2英寸直径的薄膜中，成分变化范围为0.01≤x≤0.85，并鉴定出三种晶相（立方、六方和单斜）。我们观察到在薄膜上制备的肖特基势垒二极管的特征参数与其化学和结构材料性能之间存在相关性。当铟含量较低时，二极管的肖特基势垒和整流率最高。对于样品中富含ga的部分，二极管的热稳定性也最好。相反，大In含量时串联电阻最低。总的来说，(In(x)Ga(1-x))2O3合金非常适合潜在的应用，例如具有可调谐吸收边缘的太阳盲光电探测器。
We investigated properties of an (In(x)Ga(1-x))2O3 thin film with laterally varying cation composition that was realized by a large-area offset pulsed laser deposition approach. Within a two inch diameter thin film, the composition varies between 0.01 ≤ x ≤ 0.85, and three crystallographic phases (cubic, hexagonal, and monoclinic) were identified. We observed a correlation between characteristic parameters of Schottky barrier diodes fabricated on the thin film and its chemical and structural material properties. The highest Schottky barriers and rectification of the diodes were found for low indium contents. The thermal stability of the diodes is also best for Ga-rich parts of the sample. Conversely, the series resistance is lowest for large In content. Overall, the (In(x)Ga(1-x))2O3 alloy is well-suited for potential applications such as solar-blind photodetectors with a tunable absorption edge.