Contact resistance of dibenzotetrathiafulvalene-based organic transistors with metal and organic electrodes
Contact resistance of dibenzotetrathiafulvalene-based organic transistors with metal and organic electrodes
复制标题
DOI：
10.1063/1.2834374
复制
发表时间：
2008-01
影响因子：
4
通讯作者：
K. Shibata;K. Ishikawa;H. Takezoe;H. Wada;Takehiko Mori
中科院分区：
文献类型：
--
作者：
K. Shibata;K. Ishikawa;H. Takezoe;H. Wada;Takehiko Mori
通过改变源极和漏极（S/D）电极材料研究了二苯并四硫富瓦烯（DBTTF）薄膜晶体管。不仅迁移率，而且通过传输线法估算的接触电阻也根据金属功函数而变化。尽管如此，由金属有机电荷转移盐（四硫富瓦烯）（四氰基醌二甲烷）[(TTF)(TCNQ)]制成的S/D电极表现出小得多的接触电阻，这归因于与有机/金属界面相比，有机/有机界面上的电位变化较小。当(TTF)(TCNQ)用作S/D电极时，(DBTTF)(TCNQ)薄膜充当空气稳定n沟道有机晶体管的有源层。
Thin-film transistors of dibenzotetrathiafulvalene (DBTTF) are investigated by changing the source and drain (S/D) electrode materials. Not only the mobility but also the contact resistance, estimated from the transfer line method, changes depending on the metal work functions. Nonetheless, S/D electrodes made of a metallic organic charge-transfer salt, (tetrathiafulvalene) (tetracyanoquinodimethane) [(TTF)(TCNQ)] exhibits much smaller contact resistance, which is attributed to small potential shift on the organic/organic interface compared with the organic/metal interface. A thin film of (DBTTF)(TCNQ) works as an active layer of air-stable n-channel organic transistors when (TTF)(TCNQ) is used as the S/D electrodes.