Weyl Semimetal Phase in Solid-Solution Narrow-Gap Semiconductors
Weyl Semimetal Phase in Solid-Solution Narrow-Gap Semiconductors
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DOI：
10.7566/jpsj.83.063709
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发表时间：
2014-06-01
影响因子：
1.7
通讯作者：
Nomura, Kentaro
中科院分区：
文献类型：
--
作者：
Kurebayashi, Daichi;Nomura, Kentaro
我们从理论上研究了具有强自旋-轨道相互作用的磁掺杂固溶体窄隙半导体如Cr掺杂Bi-2（SexTe 1-x）（3）中的铁磁有序。我们计算了杂质和巡游电子的自发磁化强度，并估计了临界温度与磁性掺杂剂浓度和自旋轨道相互作用强度的函数关系。发现临界温度与掺杂浓度成正比，并随着自旋轨道相互作用的增强而提高。铁磁相变可以使系统转变为具有动量空间中分离的一对外尔点的外尔半金属。
We theoretically investigate ferromagnetic ordering in magnetically doped solid-solution narrow-gap semiconductors with the strong spin-orbit interaction such as Cr-doped Bi-2(SexTe1-x)(3). We compute the spontaneous magnetization of impurities and itinerant electrons, and estimate the critical temperature as a function of the concentration of magnetic dopants and the strength of the spin-orbit interaction. It is found that the critical temperature is proportional to the concentration of dopants and enhanced with the strong spin-orbit interaction. It is also found that the ferromagnetic transition could make the system turn to the Weyl semimetal which possesses a pair of Weyl points separating in the momentum space.