A simple approach to fabrication of high-quality HfSiON gate dielectrics with improved nMOSFET performances
A simple approach to fabrication of high-quality HfSiON gate dielectrics with improved nMOSFET performances
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DOI：
10.1109/ted.2004.836533
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发表时间：
2004-10
影响因子：
3.1
通讯作者：
Xuguang Wang;Jun Liu;Feng Zhu;Naoki Yamada;Dim-Lee Kwong
中科院分区：
文献类型：
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作者：
Xuguang Wang;Jun Liu;Feng Zhu;Naoki Yamada;Dim-Lee Kwong
提出了一种在氧化硅（SiO/sub 2/）或氮氧化硅（锡永）上快速热处理氧化物理气相沉积氮化铪（HfN）薄膜制备高质量氮氧化铪（Hf锡永）的简单方法。金属TaN栅电极也被引入到这种HfSiON叠层中。HfSiON/SiO/sub 2/ stacks具有高的电子迁移率（85%SiO/sub 2/at 0.2MV/cm）、低的漏电流（10/sup-4/ of SiO/sub 2/）和上级的时间依赖性击穿可靠性等优良性能，在低功耗SOC应用中具有广阔的应用前景.此外，通过减少HfSiON电介质中的边界陷阱，证明了该HfSiON/SiO/sub 2/堆叠中的电子迁移率的改善。
A simple technique to form high-quality hafnium silicon oxynitride (HfSiON) by rapid thermal processing oxidation of physical vapor deposition hafnium nitride (HfN) thin films on ultrathin silicon oxide (SiO/sub 2/) or silicon oxynitride (SiON) layer is presented. Metal TaN gate electrode is also introduced into such HfSiON stacks. Excellent performances including large electron mobility (85%SiO/sub 2/at0.2 MV/cm), low leakage current (10/sup -4/ of SiO/sub 2/), and superior time-dependant dielectric breakdown reliability are achieved in HfSiON/SiO/sub 2/ stacks, and these results suggest such stacks are very promising for the low-power SOC applications in the near future. In addition, the improvement of the electron mobility in this HfSiON/SiO/sub 2/ stack by a reduction of the border traps in the HfSiON dielectric is demonstrated.