Structural and electrical properties of ZnO films on freestanding thick diamond films
Structural and electrical properties of ZnO films on freestanding thick diamond films
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DOI：
10.4028/www.scientific.net/msf.561-565.2423
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发表时间：
2007-10
影响因子：
--
通讯作者：
Jian Sun-;Y. Bai;Jingchang Sun;G. Du;Xin Jiang
中科院分区：
文献类型：
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作者：
Jian Sun-;Y. Bai;Jingchang Sun;G. Du;Xin Jiang
本文采用等离子体辅助金属有机化学气相沉积（MOCVD）方法在自支撑金刚石厚膜（FTDF）上沉积ZnO薄膜。以二乙基锌（DEZn）、氧气和氧化亚氮为前驱物，采用不同的衬底温度制备了高质量的ZnO薄膜。通过X射线衍射（XRD）、霍尔测量和电子探针（EPMA）分析，系统研究了衬底温度对ZnO薄膜性能的影响。实验结果表明，在600°C和73 Pa下沉积的ZnO薄膜具有良好的电学性能，Zn/O原子比对ZnO薄膜的电学性能有重要影响。
In this paper, ZnO films are deposited on freestanding thick diamond films (FTDF) by plasma-assisted metal organic chemical vapour deposition (MOCVD). Diethyl zinc (DEZn), O2 and N2O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction (XRD), Hall measurements and electron probe microanalysis (EPMA). Experimental results demonstrate that ZnO films deposited at 600°C and 73 Pa display a fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.