Etching SiO2 with HF/pyridine-supercritical carbon dioxide solutions and resultant interfacial electronic properties
Etching SiO2 with HF/pyridine-supercritical carbon dioxide solutions and resultant interfacial electronic properties
复制标题
用 HF/吡啶-超临界二氧化碳溶液蚀刻 SiO2 及其界面电子特性
DOI：
10.1116/1.2743651
复制
发表时间：
2007
影响因子：
1.4
通讯作者：
E. Irene
中科院分区：
文献类型：
--
作者：
Y. Li;D. Yang;C. A. Jones;J. Desimone;E. Irene
在高温氧气条件下，用HF/吡啶溶液在超临界CO2中腐蚀生长在单晶硅上的二氧化硅(SiO_2)薄膜。研究了在氢氟酸浓度为1000μM、气压为1.38×107、温度为35℃、45℃和55℃的溶液中，SiO_2薄膜的刻蚀速率。在完全刻蚀的硅表面上测量了SiO_2再生后形成的电容结构的电容-电压、电导-电压和漏电流。电子学结果表明，不同刻蚀次数浓度的刻蚀样品与未刻蚀样品没有系统性差异，完全刻蚀样品的Si-SiO_2界面的电荷、状态和漏电流与未刻蚀对照样品相当。
Silicon dioxide (SiO2) films grown on single crystal Si in high temperature O2 were etched using nonaqueous HF/pyridine solutions in supercritical CO2. The etch rate of SiO2 films were studied in the solutions with HF concentration up to 1000μM at 1.38×107Pa and at 35, 45, and 55°C. Capacitance versus voltage, conductance versus voltage, and leakage current measurements were performed on capacitor structures fabricated after SiO2 regrowth on completely etched Si surfaces. The electronic results revealed no systematic differences of etched and unetched samples with various etch times concentrations and that the Si–SiO2 interface of completely etched samples was comparable to the unetched control sample in terms of interface electronic charge and states and leakage current.