Solution-Based Self-Aligned Hybrid Organic/Metal-Oxide Complementary Logic with Megahertz Operation
Solution-Based Self-Aligned Hybrid Organic/Metal-Oxide Complementary Logic with Megahertz Operation
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DOI：
10.1016/j.orgel.2015.03.004
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发表时间：
2015-06
影响因子：
3.2
通讯作者：
V. Pecunia;K. Banger;A. Sou;H. Sirringhaus
中科院分区：
文献类型：
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作者：
V. Pecunia;K. Banger;A. Sou;H. Sirringhaus
我们开发了一种新型的基于溶液的集成方案，其特征在于有机和金属氧化物半导体与聚合物栅极电介质。集成依赖于一个简单的半导体减成图案技术，通过选择适当的蚀刻停止，导致理想的晶体管性能。我们利用这种新的集成方案，以制造自对准晶体管和逻辑电路的高迁移率的p型共轭聚合物和n型非晶氧化物半导体，沿着与复合聚合物栅极电介质，所有的解决方案，通过旋涂沉积。由此产生的互补逻辑门能够轨到轨转换，低至3.5 V的电源电压工作，以及充足的噪声裕度。得益于自对准栅极方法和所选半导体的最先进的平衡迁移率，我们的逻辑门实现了兆赫操作，从而展示了我们的混合集成方案的实力。
We have developed a novel solution-based integration scheme featuring organic and metal-oxide semiconductors with a polymeric gate dielectric. The integration relies on a facile subtractive patterning technique for the semiconductors, which, through the selection of an appropriate etch stopper, leads to ideal transistor performance. We utilized this novel integration scheme to fabricate self-aligned transistors and logic circuits with a high-mobility p-type conjugated polymer and an n-type amorphous oxide semiconductor, along with a composite polymeric gate dielectric, all solution-deposited by spin coating. The resulting complementary logic gates are capable of rail-to-rail transitions, low-voltage operation down to a 3.5 V power supply, and ample noise margins. Thanks to the self-aligned-gate approach and the state-of-the-art balanced mobilities of the selected semiconductors, our logic gates achieve megahertz operation, thus demonstrating the strength of our hybrid integration scheme.