Magnetic Anisotropy of Co-M-Pt ( ${\rm M}={\rm Cr}$, Mo, Ru, W, Re) Perpendicular Films Deposited on Various Seed Layer Materials

Magnetic Anisotropy of Co-M-Pt ( ${\rm M}={\rm Cr}$, Mo, Ru, W, Re) Perpendicular Films Deposited on Various Seed Layer Materials
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DOI:
10.1109/tmag.2007.892540
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发表时间:
2007-06
影响因子:
2.1
通讯作者:
H. Sato;T. Shimatsu;Y. Okazaki;O. Kitakami;S. Okamoto;H. Aoi;H. Muraoka;Y. Nakamura
H. Sato;T. Shimatsu;Y. Okazaki;O. Kitakami;S. Okamoto;H. Aoi;H. Muraoka;Y. Nakamura
中科院分区:
工程技术4区
文献类型:
--
作者:
H. Sato;T. Shimatsu;Y. Okazaki;O. Kitakami;S. Okamoto;H. Aoi;H. Muraoka;Y. Nakamura

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本文研究了(Co100-xMX)100-YPtY垂直薄膜的一阶和二阶单轴磁各向异性Ku1和Ku2以及饱和磁化强度ms,以期通过用M替代Cr来改善CoCrPt-SiO_2介质的磁性能。本文研究了14种M元素,但我们主要关注M=Cr,Mo,Ru,W和Re的薄膜,因为其他元素显著降低了Ku1,Ku2或Ku/ms比。使用M元素而不是铬,没有导致Ku1、Ku2和Ku/ms比值的任何显著增加。另一方面,CoPT二元薄膜的Ku1和KU2对所使用的种子层材料(Ru、Pd、Re、Pt、Au、Ir和Cu)有较大的依赖性。HCP-CoPT晶格的c/a比随所用种子层材料的不同而显著不同,这可能是由于CoPT的外延生长所致。随着c/a比的增大,Ku1减小,Ku2增大。使用特定的种子层材料比在CoPT中添加M元素更能有效地控制CoPT基垂直薄膜的磁各向异性
The first and second order uniaxial magnetic anisotropy, Ku1 and Ku2, and the saturation magnetization, Ms, of (Co 100-XMX)100-YPtY perpendicular thin films were examined, in order to improve the magnetic properties of CoCrPt-SiO2 media by replacing Cr with M. Fourteen kinds of M elements were examined, but we mainly focus on films with M=Cr, Mo, Ru, W and Re in this paper, since the other elements significantly reduced Ku1,Ku2 or the Ku/Ms ratio. The use of the M elements, instead of Cr, did not result in any significant increase in the values of Ku1, Ku2, and the Ku/Ms ratio. On the other hand, Ku1 and K u2 of CoPt binary films had a greater dependence on the seed layer materials used (Ru, Pd, Re, Pt, Au, Ir and Cu). The c/a ratio of the hcp-CoPt lattice varied significantly with the seed layer materials used probably due to the epitaxial growth of CoPt. Ku1 decreased and Ku2 increased as the c/a ratio increased. The use of specific seed layer materials was more effective at controlling the magnetic anisotropy of CoPt based perpendicular thin films, rather than the addition of M element to the CoPt