A K-Band Distributed Analog Phase Shifter Using Etched Ba0.6Sr0.4TiO3 Thin Films
A K-Band Distributed Analog Phase Shifter Using Etched Ba0.6Sr0.4TiO3 Thin Films
复制标题
采用蚀刻Ba0.6Sr0.4TiO3薄膜的K波段分布式模拟移相器
DOI：
10.1143/jjap.43.6746
复制
发表时间：
2004
影响因子：
1.5
通讯作者：
Kwang
中科院分区：
文献类型：
--
作者：
H. Ryu;S. Moon;Su;M. Kwak;Young;Kwang
本工作介绍了用于K波段的分布式模拟移相器（DAPS）的设计，制造和微波性能的腐蚀Ba0.6Sr0.4TiO3（BST）薄膜制造。采用脉冲激光沉积法（PLD）在（001）MgO基片上制备了用于叉指电容器（IDC）的单相Ba0.6Sr0.4TiO3薄膜。DAPS的设计包括周期性加载高阻抗共面波导（CPW）与可调BST IDC，和加载线的相移可以通过改变施加到BST薄膜的偏置电压来控制。BST薄膜除了IDC区域进行蚀刻，这意味着BST层局部存在IDC下方，并从CPW通过光刻和RF离子铣削去除，以减少DAPS的插入损耗，并消除根据施加的直流偏置电压的未加载CPW属性的改变。利用全波电磁和微波电路分析相结合的方法，DAPS可以准确而容易地建模。实验结果表明，同意非常好的模拟在感兴趣的频率。制作的DAPS在整个K波段的回波损耗优于-13 dB。在20 GHz下，当偏压从0 V增加到200 V时，BST薄膜的差分相移为179°，插入损耗为-5.6 dB ~-2.1 dB。
This work presents the design, fabrication and microwave performance of distributed analog phase shifter (DAPS) fabricated on etched Ba0.6Sr0.4TiO3 (BST) thin films for K-band applications. Single phase Ba0.6Sr0.4TiO3 thin films for interdigitated capacitors (IDC) were deposited by the pulsed laser deposition (PLD) on (001) MgO substrates. The DAPS design consists of periodically loading high impedance coplanar waveguide (CPW) with tunable BST IDC, and the phase shift of the loaded line can be controlled by varying the applied bias voltage to the BST thin films. BST thin films except IDC areas were etched, which means that BST layers locally exist beneath IDC and are removed from the CPW by photolithography and RF-ion milling, to reduce the insertion loss of DAPS and to eliminate the alteration of unloaded CPW properties according to an applied dc bias voltage. The DAPS can be accurately and easily modeled using a combination of full-wave electromagnetic and microwave circuit analysis. Experimental results are shown to agree very well with the simulated ones at the frequencies of interest. The fabricated DAPS showed that the return loss was better than -13 dB through the whole K-band frequency range. The measured differential phase shift based on BST thin films was 179° and the insertion loss is -5.6 dB–-2.1 dB with increasing the bias voltage from 0 to 200 V at 20 GHz.