Resonant interaction of LO phonons with excited donor states in GaN
Resonant interaction of LO phonons with excited donor states in GaN
复制标题
LO 声子与 GaN 中激发施主态的共振相互作用
DOI：
10.1002/pssb.200301530
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
J. Y. Han
中科院分区：
文献类型：
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作者：
A. Wysmołek;M. Potemski;R. Stępniewski;J. Baranowski;D. Look;S. K. Lee;J. Y. Han
在高达28 T的磁场中对厚的独立GaN层进行磁致发光实验。该材料的光致发光光谱显示出由于中性施主束缚激子（D 0X）而产生的窄发射线。除了DOX的主要复合通道（其中施主留在其基态）之外，还观察到涉及不同激发施主态的双电子卫星（TES）以及主要和卫星跃迁的LO声子副本。对于内部施主激发被调谐到与LO声子激发共振的磁场范围，TES的强度被强烈增强。观察到对应于高激发施主态（n > 4）的TES与DO X的LO声子复制品之间存在明显的共振相互作用。所观察到的效果进行了讨论，在电子-声子相互作用。
Magneto‐luminescence experiments performed on a thick, freestanding GaN layer in magnetic fields up to 28 T are presented. The photoluminescence spectrum of this material shows narrow emission lines due to neutral donor‐bound excitons (D0X). In addition to the principal recombination channel of D0X in which the donor is left in its ground state, two‐electron satellites (TES) involving different excited donor states, as well as LO phonon replica of the principal and satellite transitions are observed. For the magnetic field range in which internal donor excitations are tuned into resonance with the LO phonon excitations, the intensity of TES is strongly enhanced. A clear resonant interaction between TES corresponding to the highly excited donor states (n > 4) and LO phonon replica of D0X is observed. The observed effect is discussed in terms of electron–phonon interaction.