Simulations on the Effect of Magnetic Anisotropy on Switching of an Easy Cone Magnetized Free Layer
Simulations on the Effect of Magnetic Anisotropy on Switching of an Easy Cone Magnetized Free Layer
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DOI：
10.1109/tmag.2019.2942339
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发表时间：
2020-03-01
影响因子：
2.1
通讯作者：
Fukuma, Yasuhiro
中科院分区：
文献类型：
--
作者：
Deka, Angshuman;Sato, Katsunori;Fukuma, Yasuhiro
由于第二阶和第四阶垂直磁各向异性之间的竞争而产生的磁化的易锥状态具有不施加偏置磁场的非零电场转矩的优点，并且因此是纯电压驱动的磁存储设备的潜在候选者。在这篇文章中，磁化的易锥状态的发病是在铁磁薄膜模拟。随后，开关场和时间的电压控制的磁化开关过程中作为一个函数的易锥状态从膜法线的倾斜角在0度-45度的范围内进行了研究。发现开关场随着各向异性的减小而减小。切换时间被发现变得更快的易锥状态，由于其扭矩的增加的倾斜角。
The easy cone state of magnetization that arises as a result of a competition between the second- and fourth-order perpendicular magnetic anisotropies has the advantage of a non-zero electric-field torque without the application of a bias magnetic field and is thus a potential candidate for purely voltage-driven magnetic storage devices. In this article, the onset of the easy cone state of magnetization is simulated in a ferromagnet film. Subsequently, the switching field and time for voltage-controlled magnetization switching process are studied as a function of the inclination angle of the easy cone state from the film normal in the range of 0 degrees-45 degrees. The switching field is found to decrease with decreasing anisotropy. The switching time is found to become faster for higher inclination angle of the easy cone state due to an increase in its torque.