Improved microwave dielectric properties of Nd(Mg0.5Sn0.5)O3 ceramics by substituting Mg2+ with Zn2+
Improved microwave dielectric properties of Nd(Mg0.5Sn0.5)O3 ceramics by substituting Mg2+ with Zn2+
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DOI：
10.1016/j.ceramint.2012.03.047
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发表时间：
2012-09-01
影响因子：
5.2
通讯作者：
Yao, Shi-Li
中科院分区：
文献类型：
--
作者：
Chen, Yih-Chien;Chang, Kuang-Chiung;Yao, Shi-Li
本文研究了Nd（Mg0.5-xZnxSn0.5）O-3陶瓷的微波介电性能和显微结构，为该陶瓷在微波器件中的应用提供了理论依据。采用传统固相法在不同烧结温度下制备了Nd（Mg0.5-xZnxSn0.5）O3陶瓷。Nd（Mg0.4Zn0.1Sn0.5）O-3陶瓷的X射线衍射（XRD）图谱显示，随着烧结温度的升高，相结构略有变化。此外，在1500 ℃下烧结4 h的Nd（Mg0.4Zn0.1Sn0.5）O3陶瓷的介电常数（ε（r））为19.5，品质因数（Q × f）为129，200 GHz，谐振频率温度系数（τ（f））为-66 ppm/℃。(c)2012 Elsevier Ltd和Techna Group S.r.l. All rights reserved.
This study elucidates the microwave dielectric properties and microstructures of Nd(Mg0.5-xZnxSn0.5)O-3 ceramics for their potential applications in microwave devices. The Nd(Mg0.5-xZnxSn0.5)O-3 ceramics were prepared by the conventional solid-state method with various sintering temperatures. X-ray diffraction (XRD) patterns of the Nd(Mg0.4Zn0.1Sn0.5)O-3 ceramics revealed only a slight variation of phase with sintering temperatures. Additionally, a dielectric constant (epsilon(r)) of 19.5, a quality factor (Q x f) of 129,200 GHz, and a temperature coefficient of resonant frequency (tau(f)) of -66 ppm/degrees C were obtained for Nd(Mg0.4Zn0.1Sn0.5)O-3 ceramics sintered at 1500 degrees C for 4 h. (c) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.