Positron Annihilation Study of Doping Effect in Chalcogenide Glassy Semiconductors

Positron Annihilation Study of Doping Effect in Chalcogenide Glassy Semiconductors
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硫系玻璃半导体掺杂效应的正电子湮灭研究

DOI：
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发表时间：
1984
期刊：
影响因子：
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通讯作者：
E. Turkina
E. Turkina
中科院分区：
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文献类型：
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作者：
B. Kobrin;V. Shantarovich;M. Mikhailov;E. Turkina

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研究了金属外加剂对硫系玻璃半导体结构和缺陷的影响。信息通过正电子湮灭技术获得。在低掺杂浓度（约0.01 at %）下，玻璃中出现微晶相。估计了微包裹体的特征尺寸及其所含的混合原子量。发现了先前关于掺杂对玻璃电物理性质影响的解释（基于“感应效应”）的新方面。
The effect of metal admixtures on the structure and imperfections of chalcogenide glassy semiconductors is investigated for Ga admixture in GeSe4 glass. Information is obtained by the positron annihilation technique. A microcrystalline phase in glass under doping at low admixture concentrations (about 0.01 at %) is indicated. The characteristic sizes of microinclusions and the amount of admixture atoms they contain are estimated. New aspects of the earlier interpretation (on the basis of the "induction effect") of the doping effect on electrophysical properties of glass are found.