Effect of Stress in the Deposited Silicon Nitride Films on Boron Diffusion of Silicon
Effect of Stress in the Deposited Silicon Nitride Films on Boron Diffusion of Silicon
复制标题
沉积氮化硅薄膜中的应力对硅中硼扩散的影响
DOI：
10.1149/1.2043867
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发表时间：
1995
影响因子：
3.9
通讯作者：
T. Abe
中科院分区：
文献类型：
--
作者：
K. Osada;Y. Zaitsu;S. Matsumoto;M. Yoshida;E. Arai;T. Abe
研究了氮化硅薄膜中的应力对硅中硼扩散的影响。在氮气退火过程中，随着温度的降低和氮化层厚度的增加，硼扩散的延缓程度变大。另一方面，在硅表面覆盖很薄的氮化物膜，随着扩散时间的延长，硼的扩散会得到加强。这些结果表明，氮化物薄膜应力使硅衬底表面附近的区域被压缩，并改变了空位和间隙的浓度。
The effect of stress in silicon nitride films on boron diffusion of silicon has been studied. During annealing in nitrogen, the degree of the retardation in boron diffusion becomes larger as the temperature becomes lower and the thickness of nitride films increases. On the other hand, boron diffusion of Si covered with very thin nitride films is enhanced for long diffusion times. These results suggest that nitride film stress makes the region near the surface of the silicon substrate compressed and changes vacancy and interstitial concentrations