49.Infrared spectroscopic study on hydrogenation process of Si(100) surface during hydrogen plasma exposure
49.Infrared spectroscopic study on hydrogenation process of Si(100) surface during hydrogen plasma exposure
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49.氢等离子体暴露过程中Si(100)表面氢化过程的红外光谱研究
DOI：
10.1109/tps.2016.2595599
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Yoshinobu Matsuda
中科院分区：
文献类型：
--
作者：
Masanori Shinohara;Naoki Maruno;Yoshiki Takami;Susumu Takabayashi;Yoshinobu Matsuda
采用红外光谱技术研究了在室温至200 °C的不同温度下，衬底偏压为-150 V的氢等离子体辐照Si（100）表面的氢化过程。通过在室温下曝光，在产生氢插入状态和氢终止的空位之后，产生非晶层。通过在曝光期间提高衬底温度，抑制了非晶层中SiH 2的产生。在Si-Si键（IH 2）中产生两个氢插入之后，通过在超过150 °C下的等离子体暴露显著地产生以三个氢原子（VH 3）终止的Si空位。
We used infrared spectroscopy to investigate the hydrogenation process of Si(100) surface by hydrogen plasma exposure with the substrate bias of -150 V at different temperatures between room temperature and 200 °C. An amorphous layer is generated by exposure at room temperature, following the generation of both hydrogen insertion states and hydrogen terminated vacancies. By increasing the substrate temperature during exposure, generation of SiH2 in the amorphous layer is suppressed. Si vacancy terminated with three hydrogen atoms (VH3) is prominently generated by the plasma exposure at more than 150 °C, following generation of two hydrogen insertions into the Si-Si bonds (IH2).