Electrically tuned spin-orbit interaction in an InAs self-assembled quantum dot
Electrically tuned spin-orbit interaction in an InAs self-assembled quantum dot
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DOI：
10.1038/nnano.2011.103
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发表时间：
2011-08-01
影响因子：
38.3
通讯作者：
Tarucha, S.
中科院分区：
文献类型：
--
作者：
Kanai, Y.;Deacon, R. S.;Tarucha, S.
电子自旋的电控制是自旋电子学实现基于自旋的量子信息处理的前提。特别是，控制电子的轨道运动和自旋状态之间的相互作用将是有价值的，因为这种相互作用影响自旋弛豫和退相。电场已经被用来调节二维电子气中自旋-轨道相互作用的强度，但到目前为止，还没有在量子点中。在这里，我们证明，电门控可以用来改变的自旋轨道相互作用的能量在50-150 μ eV的范围内，同时保持一个单一的自组装InAs量子点的电子占领。通过观察近藤效应在强磁场下的分裂，我们确定了自旋-轨道相互作用能。
Electrical control over electron spin is a prerequisite for spintronics spin-based quantum information processing. In particular, control over the interaction between the orbital motion and the spin state of electrons would be valuable, because this interaction influences spin relaxation and dephasing. Electric fields have been used to tune the strength of the spin-orbit interaction in two-dimensional electron gases, but not, so far, in quantum dots. Here, we demonstrate that electrical gating can be used to vary the energy of the spin-orbit interaction in the range 50-150 mu eV while maintaining the electron occupation of a single self-assembled InAs quantum dot. We determine the spin-orbit interaction energy by observing the splitting of Kondo effect features at high magnetic fields.