Growth Mechanism of Nonpolar and Semipolar GaN Layers from Sapphire Sidewalls on Various Maskless Patterned Sapphire Substrates

Growth Mechanism of Nonpolar and Semipolar GaN Layers from Sapphire Sidewalls on Various Maskless Patterned Sapphire Substrates
复制标题

各种无掩模图案化蓝宝石衬底上蓝宝石侧壁非极性和半极性 GaN 层的生长机制

DOI:
--
复制
发表时间:
2010
影响因子:
1.5
通讯作者:
Narihito Okada
Narihito Okada
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
K. Hammura;H. Udono;I. J. Ohsugi ;T. Aono ;E. De Ranieri;Akihiro Kurisu;Narihito Okada

文献摘要

相似文献