Semiconducting Nanowire Field-Effect Transistor Biomolecular Sensors
Semiconducting Nanowire Field-Effect Transistor Biomolecular Sensors
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DOI：
10.1109/ted.2008.2005168
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发表时间：
2008-11-01
影响因子：
3.1
通讯作者：
Reed, Mark A.
中科院分区：
文献类型：
--
作者：
Stern, Eric;Vacic, Aleksandar;Reed, Mark A.
最近的研究表明，半导体纳米线 (NW) 场效应晶体管 (FET) 能够作为生化物质（包括小分子、蛋白质和核酸）的高灵敏度无标记传感器。通道电流的纳米级限制与大表面积与体积比相结合，使得结合到表面的带电分子能够有效地选通器件。因此，NW 表面与特定受体的功能化使得能够直接电子检测特定的感兴趣分子。该领域最初的工作依赖于通过化学气相沉积方法生长的纳米线，这需要混合自下而上的制造工艺来实现器件。由于这些技术缺乏可重复性，并且无法利用互补 MOSFET 的核心优势（即超大规模集成），最近导致许多团队仅使用传统的自上而下制造技术来创建 NW 传感器。在本文中，我们主要关注这些最新的研究，并根据实验和理论考虑讨论必要的未来研究。
Recent studies have demonstrated the ability of semi-conducting nanowire (NW) field-effect transistors (FETs) to serve as highly sensitive label-free sensors for biochemicals, including small molecules, proteins, and nucleic acids. The nanoscale confinement of the channel current in concert with the large-surface area-to-volume ratio enables charged molecules bound to the surface to effectively gate the device. Functionalization of the NW surface with specific receptors therefore enables direct electronic detection of particular molecules of interest. The original work in the field relied on NWs grown by the chemical vapor deposition method, which require hybrid bottom-up fabrication processes for device realization. The lack of reproducibility with these techniques and the associated inability to leverage the central advantage of complementary MOSFETs, namely, very large scale integration, have recently led a number of groups to create NW sensors using only traditional top-down fabrication techniques. In this paper, we focus primarily on these most recent studies and discuss necessary future studies as dictated by experimental and theoretical considerations.