A 600V-Class Partial SOI LDMOS with Step-Doped Drift Region
A 600V-Class Partial SOI LDMOS with Step-Doped Drift Region
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具有阶跃掺杂漂移区的 600V 级部分 SOI LDMOS
DOI：
10.4028/www.scientific.net/amr.1096.514
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Jin He
中科院分区：
文献类型：
--
作者：
Yue Hu;Hao Wang;D. Wang;Caixia Du;Miaomiao Ma;Jin Yang;Jin He
为了提高击穿电压（BV）和降低导通电阻（Ron），设计了一种600v级横向双扩散金属氧化物半导体（LDMOS）场效应晶体管，并在部分绝缘体上硅（PSOI）中采用步进掺杂漂移区（SDD）。该方法在器件表面产生电场峰，从而减小器件表面场，调节漂移区的掺杂调节。调整后的漂移区可以在漏极下允许更高的掺杂浓度，从而产生更高的击穿电压，并且整体上容纳更多的杂质原子，从而提供更多的电子来支持更高的电流，从而降低导通电阻。
A 600V-class lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with step-doped drift region (SDD) in partial silicon-on-insulator (PSOI) is introduced to improve breakdown voltage (BV) and reduce on-resistance (Ron). The step-doped method induces an electric field peak in the surface of the device, which can reduce the surface field in the device and adjust the doping accommodation in the drift region. The adjusted drift region can allow higher doping concentration under the drain end which results in higher breakdown voltage, and accommodate more impurity atoms as a whole which provides more electrons to support higher current and thus reduce on-resistance.