Monolithic active-passive 16 × 16 optoelectronic switch.

Monolithic active-passive 16 × 16 optoelectronic switch.
复制标题

单片主动-被动 16 × 16 光电开关。

DOI:
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发表时间:
2012
期刊:
影响因子:
3.6
通讯作者:
K. Williams
K. Williams
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
R. Stabile;A. Albores;K. Williams

文献摘要

被引文献

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我们提出了什么是我们所知的第一个有源-无源单片集成16×16开关。有源InP/InGaAsP元件在多级反射非阻塞开关设计中提供半导体光放大器门。32个代表性的连接,包括最短的,最长的,和全面的范围内的中间路径已被评估整个开关电路。10 Gb/s的信号路由被证明与光信噪比高达28.3 dB/0.1 nm和信号消光比超过50 dB。
We present what is to our knowledge the first active-passive monolithically integrated 16×16 switch. The active InP/InGaAsP elements provide semiconductor optical amplifier gates in a multistage rearrangeably nonblocking switch design. Thirty-two representative connections, including the shortest, longest, and comprehensive range of intermediate paths have been assessed across the switch circuit. The 10 Gb/s signal routing is demonstrated with an optical signal-to-noise ratio up to 28.3 dB/0.1 nm and a signal extinction ratio exceeding 50 dB.