Infrared Polarizer Fabrication by Imprinting on Sb–Ge–Sn–S Chalcogenide Glass
Infrared Polarizer Fabrication by Imprinting on Sb–Ge–Sn–S Chalcogenide Glass
复制标题
通过压印 Sb-Ge-Sn-S 硫系玻璃制造红外偏振片
DOI：
10.1143/jjap.51.012201
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
J. Nishii
中科院分区：
文献类型：
--
作者：
I. Yamada;N. Yamashita;Kunihiko Tani;T. Einishi;M. Saito;K. Fukumi;J. Nishii
在低毒硫化物玻璃（Sb-Ge-Sn-S体系）上，采用直接压印亚波长光栅，然后通过热蒸发沉积Al金属的方法，制备了由500 nm间距Al光栅组成的红外线栅偏振片。为了方便地在硫系玻璃上制作亚波长光栅，在模具表面形成了锋利的光栅。制备的铝厚度为130 nm的偏振片在5 ~ 9µm波长范围内的横向磁透过率大于60%，在3.5 ~ 11µm波长范围内的消光比大于20 dB。在5.4-µm波长处，180 nm铝丝的消光比达到27 dB。与传统的红外偏振器相比，该偏振器可以以更低的成本和更简单的制造工艺制造。
We fabricated infrared wire-grid polarizers consisting of a 500-nm pitch Al grating on a low toxic chalcogenide glass (Sb–Ge–Sn–S system) using the direct imprinting of subwavelength grating followed by a deposition of Al metal by thermal evaporation. To fabricate the subwavelength grating on a chalcogenide glass more easily, the sharp grating was formed on the mold surface. The fabricated polarizer with Al thickness of 130 nm exhibited a polarization function with a transverse magnetic transmittance greater than 60% in the 5–9 µm wavelength range, and an extinction ratio greater than 20 dB in 3.5–11 µm wavelength range. The extinction ratio of the element with Al wires of 180-nm thickness reached 27 dB at 5.4-µm wavelength. The polarizer can be fabricated at lower costs and simpler fabrication processes compared to conventional infrared polarizers.
影响因子：
3.6
作者：
Yamada, Itsunari;Takano, Keisuke;Watanabe, Wataru
通讯作者：
Watanabe, Wataru