Defect Losses under Different Processes, Stress, Recovery, and Anneal Conditions
Defect Losses under Different Processes, Stress, Recovery, and Anneal Conditions
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不同工艺、应力、恢复和退火条件下的缺陷损失
DOI：
10.1149/05201.0929ecst
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Duan M
中科院分区：
文献类型：
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作者：
Duan M
众所周知，退化会限制设备的使用寿命。早期的工作集中在缺陷的产生上，并且通常认为，一旦产生了缺陷，它将永远存在。虽然有些缺陷在受力后可以被中和，但在恢复受力后又会重新充电。最近，我们发现生成的缺陷本身是不稳定的，并且可以丢失。在这项工作中，我们研究了在不同条件下制造的样品的缺陷损失以及不同应力，恢复和退火条件下的损失。发现缺陷损耗是一种普遍现象，在等离子体硅离子和ALCVD硅离子/HfSiON堆中都存在缺陷损耗。结果表明，在退火过程中，缺陷损失对中和程度不敏感。在低至125℃的温度下观察到损耗。
It is well known that degradation limits device lifetime. Early works were focused on defect generation and it is generally believed that, once a defect is created, it will be there forever. Although some defects can be neutralized after stress, they will recharge when the stress is resumed. Recently, we show that the generated defects themselves are not stable and can be lost. In this work, we investigate defect losses on samples fabricated under different conditions and the loss after different stress, recovery, and anneal conditions. It is found that the defect losses are a generic phenomenon and occur in both plasma SiON and ALCVD SiON/HfSiON stack. It will be shown that the defect losses are insensitive to the level of neutralization during the anneal. The losses have been observed at a temperature as low as 125 o C.