Dramatic increase in the growth rate of GaN layers grown from Ga2O vapor by epitaxial growth on HVPE-GaN substrates with a well-prepared surface
Dramatic increase in the growth rate of GaN layers grown from Ga2O vapor by epitaxial growth on HVPE-GaN substrates with a well-prepared surface
复制标题
通过在表面准备充分的 HVPE-GaN 衬底上外延生长，由 Ga2O 蒸气生长的 GaN 层的生长速率显着提高
DOI：
10.7567/apex.7.035504
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发表时间：
2014
影响因子：
2.3
通讯作者：
Yuan Bu et al.
中科院分区：
文献类型：
--
作者：
Y. Hashimoto;H. Furuya;M. Ueno;K. Yamane;N. Okada;K. Tadatomo;Yuan Bu et al.
