Characterization of strain relaxation in As ion implanted Si1−xGex epilayers grown by gas source molecular beam epitaxy
Characterization of strain relaxation in As ion implanted Si1−xGex epilayers grown by gas source molecular beam epitaxy
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气体源分子束外延生长的 As 离子注入 Si1−xGex 外延层中应变弛豫的表征
DOI：
10.1063/1.120912
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发表时间：
1998
影响因子：
4
通讯作者：
Jie Zhang
中科院分区：
文献类型：
--
作者：
L. Zou;Z. Wang;Dongfei Sun;T. Fan;Xingqiang Liu;Jie Zhang
用双晶X射线衍射仪和透射电子显微镜研究了As离子注入Si_（0.57）Ge_（0.43）外延层的应变弛豫，并与未注入Si_（0.57）Ge_（0.43）外延层的应变弛豫进行了比较。实验结果表明，经过快速热退火（RTA）后，注入As+的Si_（0.57）Ge_（0.43）外延层的X射线线宽比未注入的Si_（0.57）Ge_（0.43）外延层和部分弛豫的Si_（0.57）Ge_（0.43）外延层的X射线线宽都要窄，这主要是由于注入As+的SiGe外延层中失配位错密度较低所致。RTA在高于950摄氏度的结果在非注入结构的失配位错的形成，和位错和沉淀物（暂时确定为GeAs）的As+注入外延层的组合。结果表明，注入As ~+的Si_（1-x）Gex外延层的应变弛豫机制可能与未注入的Si_（1-x）Gex外延层的应变弛豫机制不同。(C)1998年美国物理学会。
Strain relaxation in the As ion implanted Si0.57Ge0.43 epilayers was studied by double-crystal x-ray diffractometry and transmission electron microscopy, and was compared to that in the nonimplanted Si0.57Ge0.43 epilayers. Experimental results show that after rapid thermal annealing (RTA) the x-ray linewidth of the As+-implanted Si0.57Ge0.43 epilayers is narrower than that of the nonimplanted epilayers, and than that of the partially relaxed as-grown samples, which is due primarily to low density of misfit dislocations in the As+-implanted SiGe epilayers. RTA at higher than 950 degrees C results in the formation of misfit dislocations for the nonimplanted structures, and of combinations of dislocations and precipitates (tentatively identified as GeAs) for the As+-implanted epilayers. The results mean that the strain relaxation mechanism of the As+-implanted Si1-xGex epilayers may be different from that of the nonimplanted Si1-xGex epilayers. (C) 1998 American Institute of Physics.