Temperature dependence of the growth front roughening of oligomer films
Temperature dependence of the growth front roughening of oligomer films
复制标题
低聚物薄膜生长前沿粗糙化的温度依赖性
DOI：
10.1063/1.1484250
复制
发表时间：
2002
影响因子：
4
通讯作者：
G. Palasantzas
中科院分区：
文献类型：
--
作者：
D. Tsamouras;G. Palasantzas
真空沉积在硅衬底上的五聚体2，5-二正辛氧基-1，4-双[4-（苯乙烯基）苯乙烯基]-苯低聚物薄膜的生长前沿粗糙化特性强烈依赖于衬底温度在20 °C-100 °C范围内。 测得的粗糙度指数H增加从H <$0.4在低衬底温度下，生长主要是由空位形成，到H <$0.7 -0.8在升高的温度下，扩散生长发生。此外，均方根粗糙度振幅和相关长度随温度的变化密切作为一个阿克里尼乌斯过程的活化势垒可比的低聚物表面上的分子的跨国和旋转障碍。
Growth front roughening characteristics of vacuum deposited pentamer 2,5-di-n-octyloxy-1,4-bis[4-(styryl)styryl]-benzene oligomer thin films, onto silicon substrates, strongly depend on the substrate temperature in the range ∼20 °C–100 °C. The measured roughness exponents H increase from H≈0.4 at low substrate temperatures where growth is dominated by vacancy formation, to H≈0.7–0.8 at elevated temperatures where diffusive growth takes place. Moreover, the root-mean-square roughness amplitude and the correlation length evolve with temperature closely as an Arrhenius process with activation barrier comparable to molecule transnational and rotational barriers on oligomer surfaces.
影响因子：
5
作者：
M. Hoffmann
通讯作者：
M. Hoffmann