Fabrication of polymer Langmuir-Blodgett films containing regioregular poly(3-hexylthiophene) for application to field-effect transistor
Fabrication of polymer Langmuir-Blodgett films containing regioregular poly(3-hexylthiophene) for application to field-effect transistor
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DOI：
10.1021/la046922n
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发表时间：
2005-06-07
期刊：
影响因子：
3.9
通讯作者：
Miyashita, T
中科院分区：
文献类型：
--
作者：
Matsui, J;Yoshida, S;Miyashita, T
采用LB技术制备了由聚3己基噻吩（RRPHT）和聚N十二烷基丙烯酰胺（pDDA）组成的区域规整的半导体薄膜。RR-PHT和pDDA的混合物从氯仿溶液铺展在水表面上形成稳定的单层，其可以通过LB方法转移到固体基底上，产生良好限定的聚合物LB膜。LB膜的表面形貌研究表明，RR-PHT均匀分散在整个表面。通过与FeCl 3乙腈溶液接触对聚合物薄膜进行化学掺杂，并实现了5.6 S/cm的电导率。此外，LB膜被用作场效应晶体管（FET）中的半导体膜，并且通过分析电流-电压特性的饱和区和线性区分别获得2.2 × 10（-4）和4.4 × 10（-4）cm（2）V-1 s（-1）的迁移率。
\Semiconducting thin films consisting of regioregular poly(3-hexylthiophene) (RR-PHT) and poly(N-dodecylacrylamide) (pDDA) were constructed by the Langmuir-Blodgett (LB) technique. A mixture of RR-PHT and pDDA spread from a chloroform solution on a water surface forms a stable monolayer, which can be transferred onto solid substrates by the LB method, yielding a well-defined polymer LB film. Surface morphology studies of the LB film indicate that the RR-PHT is dispersed uniformly throughout the surface. The polymer thin film was chemically doped by contacting with FeCl3 acetonitrile solution, and a conductivity of 5.6 S/cm was achieved. Further, the LB film was utilized as the semiconducting film in the field-effect transistor (FET), and mobilities of 2.2 x 10(-4) and 4.4 x 10(-4) cm(2) V-1 s(-1) were obtained by analyzing the saturated and linear regions of the current-voltage characteristic, respectively.