Femtosecond-laser-induced modifications on a 4H-SiC surface and their application to low-temperature diffusion at the Ni/SiC interface
Femtosecond-laser-induced modifications on a 4H-SiC surface and their application to low-temperature diffusion at the Ni/SiC interface
复制标题
飞秒激光诱导的 4H-SiC 表面改性及其在 Ni/SiC 界面低温扩散中的应用
DOI：
10.7567/jjap.57.116501
复制
发表时间：
2018
影响因子：
1.5
通讯作者：
Tanaka Yasuhiro
中科院分区：
文献类型：
--
作者：
Okada Tatsuya;Tomita Takuro;Ueki Tomoyuki;Hashimoto Takuya;Fuchikami Yuki;Katayama Hiroyuki;Hisazawa Hiromu;Tanaka Yasuhiro
