organic thin-film transistor with novel high-k polymers as dielectric layers
organic thin-film transistor with novel high-k polymers as dielectric layers
复制标题
以新型高k聚合物作为介电层的有机薄膜晶体管
DOI：
10.1039/c5py00221d
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Zuosen Shi
中科院分区：
文献类型：
--
作者：
Yao Li;He Wang;Chunyu Zhang;Yingchao Zhang;Zhanchen Cui;Donghang Yan;Zuosen Shi
本研究描述了一种通用的方法来设计和合成一系列新型的高k聚合物含有p-共轭结构与氰基用作有机薄膜晶体管（OTFT）的介电层。聚合物介电膜的表面形态，介电常数，漏电流密度和与有机半导体，它可以很容易地通过在环境气氛中的溶液工艺制造的兼容性的基础上进行了评估。表征证实，具有氰基的p-共轭结构可以提供高介电常数（高k）和低静电损耗。采用这些聚合物介质层，对六苯基（p-6P）/钒基酞菁（VOPc）OTFT表现出优异的性能，阈值电压为-3.22 V，载流子迁移率为0.49 cm（2）V-1 s（-1），开/关电流比>10（6）。
This study describes a general approach to design and synthesize a series of novel high-k polymers containing p-conjugated structures with cyano groups for use as a dielectric layer in organic thin-film transistors (OTFTs). The polymer dielectric films have been evaluated based on surface morphology, dielectric constant, leakage current density and compatibility with organic semiconductors, which can be readily fabricated via solution processes in an ambient atmosphere. The characterization confirms that the p-conjugated structures with cyano groups can provide a high dielectric constant (high-k) and a low electrostatic loss. With these polymer dielectric layers, para-sexiphenyl (p-6P)/vanadyl-phthalocyanine (VOPc) OTFTs exhibit excellent performances with a threshold voltage of -3.22 V, a charge carrier mobility of 0.49 cm(2) V-1 s(-1), and an on/off current ratio >10(6).