RF Operation of Hydrogen-Terminated Diamond Field Effect Transistors: A Comparative Study
RF Operation of Hydrogen-Terminated Diamond Field Effect Transistors: A Comparative Study
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DOI：
10.1109/ted.2015.2392798
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发表时间：
2015-03-01
影响因子：
3.1
通讯作者：
Moran, David A. J.
中科院分区：
文献类型：
--
作者：
Russell, Stephen;Sharabi, Salah;Moran, David A. J.
在同外延端氢金刚石上定义了三组不同栅长场效应晶体管（250、120和50 nm），其中50 nm器件是迄今为止制造的最小栅长金刚石晶体管。采用直流和小信号射频测量来比较这些门节点的操作。生成了射频小信号等效电路，以对比各个元件，并更好地理解各种栅极尺寸的操作。将栅极长度缩放到更小的尺寸会导致这些器件的截止频率增加，尽管寄生元件在50nm的最短栅极长度处占主导地位，限制了这些器件的突出潜力。
Three sets of different gate-length field-effect transistors (250, 120, and 50 nm) have been defined on homoepitaxial hydrogen-terminated diamond with the 50-nm device being the smallest gate length diamond transistor fabricated to date. DC-and small-signal RF measurements were undertaken to compare the operation of these gate nodes. RF small-signal equivalent circuits were generated to contrast individual components and better understand the operation at various gate dimensions. Scaling the gate length to smaller dimensions leads to an increase in the cutoff frequency of these devices although parasitic elements are found to dominate at the shortest gate length of 50 nm, limiting the outstanding potential of these devices.