Generation of electricity using InGaAsSb and GaSb TPV cells in combustion-driven radiant sources
Generation of electricity using InGaAsSb and GaSb TPV cells in combustion-driven radiant sources
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DOI:
10.1016/j.solmat.2005.02.002
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发表时间:
2006-01
影响因子:
6.9
通讯作者:
K. Qiu;A. Hayden;M. Mauk;O. Sulima
中科院分区:
文献类型:
--
作者:
K. Qiu;A. Hayden;M. Mauk;O. Sulima
Electric power generation using InGaAsSb and GaSb thermophotovoltaic (TPV) cells was investigated in a gas-fired heating furnace. Electric output characteristics of the TPV cells in the combustion-driven radiant sources are presented. For the InGaAsSb cells, open circuit voltage was higher than 300mV at a short circuit current density above 1A/cm2. The short circuit current of the InGaAsSb cells increased more rapidly than that of the GaSb cells in radiator temperature range 930–1215°C. A mathematical model for the TPV devices was developed to describe the effect of cell bandgap and radiator temperature on electric power output and cell efficiency. Also, the design aspects of the combustion-driven TPV systems are discussed.