A Waveguide NbTiN SIS Mixer for THz Array Applications
A Waveguide NbTiN SIS Mixer for THz Array Applications
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用于太赫兹阵列应用的波导 NbTiN SIS 混频器
DOI：
10.1109/icimw.2006.368600
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
T. M. Klapwijk
中科院分区：
文献类型：
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作者：
A. Baryshev;F. P. Mena;R. Hesper;T. Zijlstra;C. Lodewijk;W. Wild;T. M. Klapwijk
本文介绍了一种工作频率为780-950 GHz的双边带SIS外差混频器的设计与实现。NbTiN高Tc超导体与铝的组合用于SIS结调谐电路。我们使用了一个双面波导探头与固定backshort调谐器的设计，这是通过一个3D EM建模软件优化。混频器的紧凑机械外壳允许在焦平面阵列中组合几个单元。我们将提出七个混频器单元的瞬时带宽测量结果，并将其与理论预测进行比较。我们还提出了一个外差灵敏度测试结果，这些混频器的最佳实现DSB混频器噪声温度约为250 K（物理温度4.2 K），这是只有几倍高于这些频率的量子噪声限制。
In this paper we will present the design and realization of a double sideband SIS heterodyne mixer for the frequency range of 780-950 GHz. A NbTiN high Tc superconductor in combination with aluminum is used for a SIS junction tuning circuit. We use a double side waveguide probe with a fixed backshort tuner design which was optimized by means of a 3D EM-modeling software. Compact mechanical envelope of the mixer allows for a combination of several units in a focal plane array. We will present results of instantaneous bandwidth measurement for seven mixer units and compare it with theoretical predictions. We also present a heterodyne sensitivity test results for these mixers with the best achieved DSB mixer noise temperature of about 250 K (physical temperature 4.2 K) which is only several times higher than a quantum noise limit for these frequencies.