Extraction of the chemical contribution to the interfacial magnetic anisotropy in Ni/Cu3Au(001)
Extraction of the chemical contribution to the interfacial magnetic anisotropy in Ni/Cu3Au(001)
复制标题
提取 Ni/Cu3Au(001) 界面磁各向异性的化学贡献
DOI：
10.1103/physrevb.105.024402
复制
发表时间：
2022
影响因子：
3.7
通讯作者：
Xiaofeng Jin
中科院分区：
文献类型：
--
作者：
Na Lei;Liu Yang;Dahai Wei;Yuan Tian;Xiaofeng Jin
The manipulation of magnetic anisotropy via interface is crucial for spintronics, but its mechanism is still controversial due to the parasitic problem of strain and the chemistry environment. We have independently controlled the interfacial chemistry of the epitaxially grown Ni film on Cu3Au(001) by inserting the thickness wedged Cu layer. The Ni layer is confirmed to be fully strained until 8 ML by the analysis of LEED I-V spectra, which guarantees that the strain contributions to the magnetic anisotropies are identical. Our results clearly show that the chemistry contribution of Au atoms at Ni/Cu3Au interface plays a major role for its perpendicular magnetic anisotropy. We provide a method to quantitatively separate and extract the chemistry and strain contributions to the interfacial magnetic anisotropy, which is helpful for clarifying its mechanism and developing high performance spintronic materials and devices.
