Electro-optical modulation at 1550 nm in an as-deposited hydrogenated amorphous silicon p-i-n waveguiding device
Electro-optical modulation at 1550 nm in an as-deposited hydrogenated amorphous silicon p-i-n waveguiding device
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DOI：
10.1364/oe.19.002941
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发表时间：
2011-02-14
期刊：
影响因子：
3.8
通讯作者：
Summonte, Caterina
中科院分区：
文献类型：
--
作者：
Della Corte, Francesco G.;Rao, Sandro;Summonte, Caterina
氢化非晶硅 (a-Si:H) 已被考虑用于 lambda = 1.55 μm 光子集成电路中的无源光学元件，如波导和环形谐振器。然而，对其电光特性的研究仍处于早期阶段，因此该半导体在实践中尚未考虑用于光调制。我们首次展示了反向偏置 a-Si:H p-i-n 波导结构中的有效电光调制。特别是，在波导集成法布里-珀罗谐振器中研究了相位调制，其中 V-pi.L-pi 乘积确定为 63 V.cm。测得的特性开启和关闭时间为 14 ns。该器件采用更宽间隙的非晶碳化硅 (a-SiC:H) 薄膜代替氧化硅作为下包层。这样，制造过程中涉及的最高温度为 170 摄氏度，这确保了与 CMOS 工艺所需的技术兼容性。 (C) 2011 美国光学学会
Hydrogenated amorphous silicon (a-Si:H) has been already considered for the objective of passive optical elements, like waveguides and ring resonators, within photonic integrated circuits at lambda = 1.55 mu m. However the study of its electro-optical properties is still at an early stage, therefore this semiconductor in practice is not considered for light modulation as yet. We demonstrated, for the first time, effective electro-optical modulation in a reverse biased a-Si:H p-i-n waveguiding structure. In particular, phase modulation was studied in a waveguide integrated Fabry-Perot resonator in which the V-pi.L-pi product was determined to be 63 V.cm. Characteristic switch-on and switch-off times of 14 ns were measured. The device employed a wider gap amorphous silicon carbide (a-SiC:H) film for the lower cladding layer instead of silicon oxide. In this way the highest temperature involved in the fabrication process was 170 degrees C, which ensured the desired technological compatibility with CMOS processes. (C) 2011 Optical Society of America