STRUCTURE AND PROPERTIES OF EPITAXIAL BA0.5SR0.5TIO3/SRRUO3/ZRO2 HETEROSTRUCTURE ON SI GROWN BY OFF-AXIS SPUTTERING
STRUCTURE AND PROPERTIES OF EPITAXIAL BA0.5SR0.5TIO3/SRRUO3/ZRO2 HETEROSTRUCTURE ON SI GROWN BY OFF-AXIS SPUTTERING
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DOI：
10.1063/1.115542
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发表时间：
1995-09-04
影响因子：
4
通讯作者：
FORK, DK
中科院分区：
文献类型：
--
作者：
HOU, SY;KWO, J;FORK, DK
我们报告的生长和表征外延Ba0.5Sr0.5TiO3/SrRuO 3/ZrO 2在Si上的潜在的电荷存储应用。Ba0.5Sr0.5TiO3（BST）和SrRuO 3（SRO）都是在钇稳定的ZrO 2（YSZ）（100）缓冲Si上（110）取向生长的。这些膜显示出高度的结晶度，在界面处的相互扩散最小，这从X射线衍射、卢瑟福背散射和透射电子显微镜中得到证明。对各层之间的面内晶体学关系的研究揭示了BST/SRO和YSZ之间有趣的长方体外延。BST介电层的介电常数和损耗角正切在10 kHz下分别为360和0.01。在1 V电压下，漏电流密度小于4 × 10 ~（-7）A/cm ~ 2。在1-10 MHz频率范围内，介电常数和损耗角正切都与频率有很强的关系。这归因于测量回路中的串联电阻的影响，这可能与底部SrRuO 3电极有关。(C)1995年美国物理学会。
We report the growth and characterization of epitaxial Ba0.5Sr0.5TiO3/SrRuO3/ZrO2 on Si for potential charge storage applications. Both Ba0.5Sr0.5TiO3 (BST) and SrRuO3 (SRO) are grown (110)-oriented on yttrium-stabilized ZrO2 (YSZ) (100)-buffered Si. These films show a high degree of crystallinity with minimal interdiffusion at the interfaces as evidenced from x-ray diffraction, Rutherford backscattering, and transmission electron microscopy. Studies on the in-plane crystallographic relations between the layers revealed an interesting rectangle-on-cube epitaxy between BST/SRO and YSZ. The dielectric constant and loss tangent of the BST dielectric layer are 360 and 0.01 at 10 kHz, respectively. The leakage current density is lower than 4X10(-7) A/cm(2) at 1 V. A strong frequency dependence on both dielectric constant and loss tangent is observed in 1-10 MHz frequency range. This is attributed to the effect of a series resistance in the measurement loop, which is likely related to the bottom SrRuO3 electrode. (C) 1995 American Institute of Physics.