Schottky barrier thin film transistors using solution-processed n-ZnO.
Schottky barrier thin film transistors using solution-processed n-ZnO.
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DOI：
10.1021/am201656h
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发表时间：
2012-03
影响因子：
9.5
通讯作者：
A. Adl;A. Ma;Manisha Gupta;M. Benlamri;Y. Tsui;D. Barlage;K. Shankar
中科院分区：
文献类型：
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作者：
A. Adl;A. Ma;Manisha Gupta;M. Benlamri;Y. Tsui;D. Barlage;K. Shankar
溶液法制备的氧化锌薄膜在低成本电子器件中作为薄膜晶体管(TFT)的活性材料具有很大的吸引力。然而，由于陷阱和其他缺陷的高密度，缺乏真正的增强模式操作、低迁移率以及晶体管特性的不可靠性，这给在电路中使用这种TFT带来了挑战。我们在这份报告中证明，这种TFT的电学特性可以通过源注入势垒来改善。利用重掺杂溶液处理的氧化锌作为有源层，制备了非对称肖特基源区金属-氧化物-半导体场效应晶体管。在溶液过程中，用三乙胺代替常用的一乙醇胺作为稳定剂制备了N(+)-氧化锌。选择Au作为源极金属化，以创建与ZnO的肖特基接触，并选择Al欧姆接触作为漏极。施加到栅极的电压通过肖特基势垒感应场发射，并允许通过改变势垒的宽度来调制漏电流。通过在肖特基接触反向偏置时操作非对称MOSFET，实现了对晶体管特性的有效控制。
Solution-processed ZnO thin films are attractive as active materials in thin film transistors (TFTs) for low-cost electronic device applications. However, the lack of true enhancement mode operation, low mobility, and unreliability in transistor characteristics due to the high density of traps and other defects present challenges in using such TFTs in circuits. We demonstrate in this report that the electrical characteristics of such TFTs can be improved by source injection barriers. Asymmetrical Schottky source metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated by utilizing heavily doped solution-processed ZnO as the active layer. n(+)-ZnO was obtained by using triethylamine as the stabilizer in the solution process instead of the more commonly used monoethanolamine. Au was chosen for source metallization to create a Schottky contact to the ZnO and an Al ohmic contact was chosen as the drain. Voltage applied to the gate induced field emission through the Schottky barrier and allowed modulation of the drain current by varying the width of the barrier. By operating the asymmetrical MOSFET when the Schottky contact is reverse biased, effective control over the transistor characteristics was obtained.