Negative differential resistance in the Peierls insulating phases of TTF-TCNQ

Negative differential resistance in the Peierls insulating phases of TTF-TCNQ
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DOI:
10.1103/physrevb.96.045116
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发表时间:
2017-07
期刊:
影响因子:
3.7
通讯作者:
Daiki Tonouchi;M. Matsushita;K. Awaga
Daiki Tonouchi;M. Matsushita;K. Awaga
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Daiki Tonouchi;M. Matsushita;K. Awaga

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在53 K以下的低温Peierls绝缘相,在最著名的有机导体TTF-TCNQ中观察到负微分电阻(NDR)。用四探针法测得的低于此温度的伏安特性曲线显示出独特的负阻特性,其对电导率(σ)的曲线在三个σ值处出现拐点,与温度无关。发现这些σ值与TTF-TCNQ中电荷密度波形成的三个转变温度(53、49和38 K)下的电导率相一致。这表明TTF-TCNQ的Peierls绝缘相的电子结构由总载流子密度决定,总载流子密度不仅由热激发决定,还由载流子注入决定。
Negative differential resistance (NDR) was observed in the most well known organic conductor, TTF-TCNQ, in its low-temperature Peierls insulator phase below 53 K. The voltage-currentcharacteristics below this temperature, measured by a four-probe method, exhibited unique NDR behavior, in which theversus conductivity (σ) plots had the inflection points at the three σ values without depending on temperature. These σ values were found to coincide with the conductivities at the three transition temperatures (53, 49, and 38 K) for the formation of the charge-density waves in TTF-TCNQ. This suggests that the electronic structure of the Peierls insulating phase of TTF-TCNQ is governed by the total carrier density, which is determined by not only thermal excitation but also carrier injection.