Deposition and properties of yttria-stabilized Bi[sub 2]O[sub 3] thin films using reactive direct current magnetron cosputtering
Deposition and properties of yttria-stabilized Bi[sub 2]O[sub 3] thin films using reactive direct current magnetron cosputtering
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DOI：
10.1149/1.2221265
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发表时间：
1992-09
影响因子：
3.9
通讯作者：
L. S. Wang;S. Barnett
中科院分区：
文献类型：
--
作者：
L. S. Wang;S. Barnett
In this paper, yttria-stabilized Bi[sub 2]O[sub 3] (YSB) thin films are deposited using reactive direct current (d.c.) magnetron cosputtering from Y and Bi targets. The films were deposited in argon/oxygen sputtering gas mixtures onto silica glass, NaCl, and MgO substrates. (Y[sub 2]O[sub 3])[sub x](Bi[sub 2]O[sub 3])[sub 1 [minus] x] thin films with x = 0.25-0.5 were obtained under metallic mode sputtering conditions, but were found to be [approx]10% oxygen deficient. Post-deposition annealing in air at T[approx gt] 500[degrees]C led to fully stoichiometric films. X-ray diffraction and transmission electron microscope (TEM) studies showed that the structure of the annealed films was cubic with lattice parameters following Vegar's law. The films were dense as judged by scanning electron microscope (SEM) and TEM. Complex impedance spectroscopy measurements were carried out in air on x = 0.25 films with Ag-(La[sub 0.7]Sr[sub 0.3])CoO[sub 3] cermet electrodes. The temperature dependent ionic conductivity exhibited a knee point at T[sub d] [approx]870[degrees]K, with activation energies of 1.2 eV below T[sub d] and 0.96 eV above T[sub d], in good agreement with values for bulk YSB with the same composition. The interfacial resistance of the cermet with 30 volume percent (v/o) AG on a YSB electrolyte thin film [approx]0.3more » [Omega] cm[sup 2] at 750[degrees]C.« less
