Possibility of Magnetic Ordered States in Semiconductor Quantum Dot System
Possibility of Magnetic Ordered States in Semiconductor Quantum Dot System
复制标题
半导体量子点系统中磁有序态的可能性
DOI：
10.1143/jjap.29.l2463
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发表时间：
1990
影响因子：
1.5
通讯作者：
A. Sugimura
中科院分区：
文献类型：
--
作者：
A. Sugimura
从理论上提出了半导体量子点阵列中磁有序态的可能性。根据计算的在位排斥能和电子转移能，发现GaAs/AlGaAs量子点系统可以用单带Hubbard模型描述。在此模型的平均场近似的框架内，它表明，磁有序，如铁磁性和反铁磁性，可以预期在量子点阵列的点宽度和间距为50 μ m-200 μ m。
The possibility of magnetic ordered states in a semiconductor quantum dot array is proposed theoretically. On the basis of the calculated on-site repulsion energy and the electron transfer energy, it is found that the GaAs/AlGaAs quantum dot system can be described by the one-band Hubbard model. Within the framework of the mean field approximation for this model, it is shown that the magnetic ordering such as ferro- and antiferromagnetism can be expected in quantum dot arrays with a dot width and spacing of 50 Å ∼200 Å.