Excitonic localization in AlN-rich AlxGa1-xN/AlyGa1-yN multi-quantum-well grain boundaries
Excitonic localization in AlN-rich AlxGa1-xN/AlyGa1-yN multi-quantum-well grain boundaries
复制标题
DOI：
10.1063/1.4896681
复制
发表时间：
2014-09
影响因子：
4
通讯作者：
I. Ajia;P. Edwards;Zhiqiang Liu;J. C. Yan;R. Martin;I. Roqan
中科院分区：
文献类型：
--
作者：
I. Ajia;P. Edwards;Zhiqiang Liu;J. C. Yan;R. Martin;I. Roqan
采用金属有机化学气相沉积（MOCVD）方法生长了富AlN晶粒的AlGaN/AlGaN多量子威尔斯阱（MQW）。观察到的晶粒具有很强的激子本地化特性，其大小的影响。限制激子的趋势随着晶界面积的增加而逐渐增强。光致发光结果表明，在低于150 K的温度下，多量子阱对近带边发射的峰值能量具有主导作用，而在高于150 K时，晶粒的局域化特性变得明显.阴极射线发光图表明，晶界对AlGaN/AlGaN样品的峰强度没有影响。
AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.