Fabrication of silica-shielded Ga-ZnS metal-semiconductor nanowire heterojunctions
Fabrication of silica-shielded Ga-ZnS metal-semiconductor nanowire heterojunctions
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DOI：
10.1002/adma.200500317
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发表时间：
2005-08-16
影响因子：
29.4
通讯作者：
Golberg, D
中科院分区：
文献类型：
--
作者：
Hu, JQ;Bando, Y;Golberg, D
Ga-ZnS纳米线异质结，均匀地包裹着非常薄的二氧化硅纳米管，通过热蒸发的SiO，Ga 2 O3，和ZnS粉末前体，然后通过热化学反应制备。一些纳米线有一个单一的结（图，顶部），而另一些有多个结（底部）。Ga-ZnS界面对电子束照射（EBI）特别敏感，使得EBI驱动的开关成为可能。
Ga-ZnS nanowire heterojunctions, uniformly sheathed with very thin silica nanotubes, are prepared via thermal evaporation of SiO, Ga2O3, and ZnS powder precursors followed by thermo-chemical reaction. Some nanowires have a single junction (Figure, top), while others have multiple junctions (bottom). The Ga-ZnS interface is particularly sensitive to electron-beam irradiation (EBI), making possible an EBI-driven switch.