GaAs nanowire/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) hybrid solar cells
GaAs nanowire/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) hybrid solar cells
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DOI：
10.1088/0957-4484/21/28/285203
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发表时间：
2010-07-16
期刊：
影响因子：
3.5
通讯作者：
Lin, Ching-Fuh
中科院分区：
文献类型：
--
作者：
Chao, Jiun-Jie;Shiu, Shu-Chia;Lin, Ching-Fuh
在本文中，研究了一种基于聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸）（PEDOT：PSS）和垂直排列的n型砷化镓纳米线（NW）阵列之间的异质结的新型混合太阳能电池。 GaAs纳米线阵列是通过感应耦合等离子体反应离子刻蚀，以旋涂的SiO(2)纳米球作为刻蚀掩模，直接对GaAs晶片进行纳米刻蚀而制成的。 PEDOT: PSS 粘附在 GaAs NW 阵列的表面，形成 p-n 结。 GaAs NW 阵列的形态强烈影响 GaAs NW/PEDOT: PSS 混合太阳能电池的特性。相对于传统平面电池，GaAs 纳米线阵列的反射率抑制和互穿异质结界面大大提高了效率。与平面GaAs/PEDOT:PSS电池相比，AM 1.5全球一太阳照度下的功率转换效率从0.29%提高到5.8%。
In this paper, a new type of hybrid solar cell based on a heterojunction between poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) and vertically aligned n-type GaAs nanowire (NW) arrays is investigated. The GaAs NW arrays are fabricated by directly performing the nano-etching of GaAs wafer with spun-on SiO(2) nanospheres as the etch mask through inductively coupled plasma reactive ion etching. The PEDOT: PSS adheres to the surface of the GaAs NW arrays to form a p-n junction. The morphology of GaAs NW arrays strongly influences the characteristics of the GaAs NW/PEDOT: PSS hybrid solar cells. The suppression of reflectance and the interpenetrating heterojunction interface of GaAs NW arrays offers great improvements in efficiency relative to a conventional planar cell. Compared to the planar GaAs/PEDOT:PSS cells, the power conversion efficiency under AM 1.5 global one sun illumination is improved from 0.29% to 5.8%.